53

10.1090/S0002-9939-99-04901-1

Year:
1999
Language:
english
File:
PDF, 245 KB
english, 1999
70

Impurity lines of boron and phosphorus in silicon

Year:
1964
Language:
english
File:
PDF, 524 KB
english, 1964
79

Impurity lines of boron and phosphorus in silicon

Year:
1964
Language:
english
File:
PDF, 220 KB
english, 1964
80

New results on the Zeeman effect of phosphorus in silicon

Year:
1973
Language:
english
File:
PDF, 301 KB
english, 1973
81

High resolution study of the group V impurities absorption in silicon

Year:
1979
Language:
english
File:
PDF, 407 KB
english, 1979
83

Excited states of Ag and Cu acceptors in CdTe

Year:
1982
Language:
english
File:
PDF, 301 KB
english, 1982
84

High-resolution spectroscopy of the neutral sulfur-related centers in silicon

Year:
1985
Language:
english
File:
PDF, 186 KB
english, 1985
85

Highly excited states of donor centres in silicon

Year:
1985
Language:
english
File:
PDF, 255 KB
english, 1985
88

Hydrogen passivated defects in InP

Year:
1995
Language:
english
File:
PDF, 199 KB
english, 1995
90

Improvement in the detection of oxygen in silicon by infra-red absorption

Year:
1969
Language:
english
File:
PDF, 205 KB
english, 1969
94

Spectroscopic studies of 450° C thermal donors in silicon

Year:
1983
Language:
english
File:
PDF, 247 KB
english, 1983