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51

Buried SiO2 Films: Interfaces and Defects

Stesmans, Andre

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 517 KB

1997

52

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

Van Bavel, A.-M., Degroote, S., Vantomme, A., Stesmans, Andre, Langouche, G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 390 KB

1995

53

[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks

Van der Heyden, Nikolaas, Pourtois, Geoffrey, De Gendt, Stefan, Heyns, Marc, Stesmans, Andre

Year:

2007

Language:

english

File:

PDF, 313 KB

english, 2007

54

SiC/SiO2 Interface States: Properties and Models

Afanas'ev, Valery V., Ciobanu, Florin, Dimitrijev, Sima, Pensl, Gerhard, Stesmans, Andre

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

55

Interface Nature of Ordered Thermally Oxidized Si Nanowires Probed by Electron Spin Resonance: Post Fabrication Annealing and Irradiation

Jivānescu, Mihaela, Stesmans, Andre, Kurstjens, Rufi, Dross, Frédéric

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 4.27 MB

english, 2013

56

Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities

Brinza, Monica, Emelianova, Evguenia V., Stesmans, André, Adriaenssens, Guy J.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 203 KB

english, 2004

57

0 Surrounding of Pb Defects at the (111)Si/SiO2 Interface

Stesmans, Andre

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 408 KB

1992

58

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Substrate-limited Mobility in Single- and Bi-layer Graphene on Dielectric Materials

Klekachev, Alexander, Cantoro, Mirco, Nourbakhsh, Amirhasan, Van der Veen, Marleen H., Clemente, Francesca, Stesmans, Andre L., Sels, Bert, Heyns, Marc, De Gendt, Stefan

Year:

2009

Language:

english

File:

PDF, 603 KB

english, 2009

59

ECS Transactions [ECS China Semiconductor Technology International Conference 2011 (CSTIC 2011) - Shanghai, China (March 13 - March 14, 2011)] - Electron States at Interfaces of Semiconductors and Metals with Insulating Films

Afanas'ev, Valeri V., Houssa, Michel, Stesmans, Andre

Year:

2011

Language:

english

File:

PDF, 232 KB

english, 2011

60

AIP Conference Proceedings [AIP Publishing LLC FUNDAMENTALS AND APPLICATIONS IN SILICA AND ADVANCED DIELECTRICS (SIO2014): X International Symposium on SiO2, Advanced Dielectrics and Related Devices - Cagliari, Italy (16–18 June 2014)] - Inherent interface defects in thermal (211)Si/SiO2:29Si hyperfine interaction

Iacovo, Serena, Stesmans, Andre

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

61

Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface

Nguyen Hoang Thoan,, Andre Stesmans,, Anh Phuc Duc Nguyen,, Koen Keunen,, Afanas'ev, Valery V.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

62

High Cycling Stability and Extreme Rate Performance in Nanoscaled LiMn 2 O 4 Thin Films

Put, Brecht, Vereecken, Philippe M., Labyedh, Nouha, Sepulveda, Alfonso, Huyghebaert, Cedric, Radu, Iuliana P., Stesmans, Andre

Journal:

ACS Applied Materials & Interfaces

Year:

2015

Language:

english

File:

PDF, 1.96 MB

english, 2015

63

Topological to trivial insulating phase transition in stanene

Houssa, Michel, van den Broek, Bas, Iordanidou, Konstantina, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Locquet, Jean-Pierre, Afanas’ev, Valery, Stesmans, André

Journal:

Year:

2016

Language:

english

File:

PDF, 1.43 MB

english, 2016

64

Hydrogen induced dipole at the Pt/oxide interface in MOS devices

Kolomiiets, Nadiia M., Afanas'ev, Valeri V., Opsomer, Karl, Houssa, Michel, Stesmans, Andre

Journal:

physica status solidi (a)

Year:

2016

Language:

english

File:

PDF, 391 KB

english, 2016

65

Photonic nanostructures for advanced light trapping in silicon solar cells: the impact of etching on the material electronic quality

Trompoukis, Christos, Stesmans, Andre, Simoen, Eddy, Depauw, Valérie, El Daif, Ounsi, Lee, Kidong, Gordon, Ivan, Mertens, Robert, Poortmans, Jef

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2016

Language:

english

File:

PDF, 596 KB

english, 2016

66

Controlled Sulfurization Process for the Synthesis of Large Area MoS 2 Films and MoS 2 /WS 2 Heterostructures

Chiappe, Daniele, Asselberghs, Inge, Sutar, Surajit, Iacovo, Serena, Afanas'ev, Valeri, Stesmans, Andre, Balaji, Yashwanth, Peters, Lisanne, Heyne, Markus, Mannarino, Manuel, Vandervorst, Wilfried, Sa

Journal:

Advanced Materials Interfaces

Year:

2016

Language:

english

File:

PDF, 2.76 MB

english, 2016

67

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

van den Broek, Bas, Houssa, Michel, Lu, Augustin, Pourtois, Geoffrey, Afanas’ev, Valery, Stesmans, Andre

Journal:

Year:

2016

Language:

english

File:

PDF, 2.53 MB

english, 2016

68

Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO 2

Kolomiiets, Nadiia M., Afanas'ev, Valery V., Madia, Oreste, Cott, Daire J., Collaert, Nadine, Thean, Aaron, Stesmans, Andre

Journal:

Physica status solidi

Year:

2016

Language:

english

File:

PDF, 417 KB

english, 2016

69

Silicene on non-metallic substrates: Recent theoretical and experimental advances

Scalise, Emilio, Iordanidou, Kostantina, Afanas’ev, Valeri V., Stesmans, André, Houssa, Michel

Journal:

Year:

2017

Language:

english

File:

PDF, 2.88 MB

english, 2017

70

(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors

Afanas'ev, Valery V., Chiappe, Daniele, Leonhardt, Alessandra, Houssa, Michel, Huyghebaert, Cedric, Radu, Iuliana, Stesmans, Andre

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 416 KB

english, 2017

71

Erratum to: Silicene on non-metallic substrates: Recent theoretical and experimental advances

Scalise, Emilio, Iordanidou, Konstantina, Afanas’ev, Valeri V., Stesmans, André, Houssa, Michel

Journal:

Year:

2017

File:

PDF, 530 KB

2017

72

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

Afanas'ev, Valery, Kolomiiets, Nadiia, Houssa, Michel, Stesmans, Andre

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 3.38 MB

english, 2017

73

(Invited) Probing Dopants in 2H MoS 2 Crystals and 2D Layers by Electron Paramagnetic Resonance: Identification and Quantification

Stesmans, Andre, Iacovo, Serena, Schoenaers, Ben, Houssa, Michel, Afanas'ev, Valeri V.

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 271 KB

english, 2017

74

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Dhayalan, Sathish Kumar, Kujala, Jiri, Slotte, Jonatan, Pourtois, Geoffrey, Simoen, Eddy, Rosseel, Erik, Hikavyy, Andriy, Shimura, Yosuke, Iacovo, Serena, Stesmans, Andre, Loo, Roger, Vandervorst, Wil

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 669 KB

english, 2016

75

Nitrogen acceptor in 2H-polytype synthetic MoS 2 assessed by multifrequency electron spin resonance

Schoenaers, Ben, Stesmans, Andre, Afanas’ev, Valery V.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2018

Language:

english

File:

PDF, 1.89 MB

english, 2018

76

Structural Properties of Al–O Monolayers in SiO 2 on Silicon and the Maximization of their Negative Fixed Charge Density

Hiller, Daniel, Göttlicher, Jörg, Steininger, Ralph, Huthwelker, Thomas, Julin, Jaakko, Munnik, Frans, Wahl, Michael, Bock, Wolfgang, Schoenaers, Ben, Stesmans, Andre, Koenig, Dirk

Journal:

ACS Applied Materials & Interfaces

Year:

2018

Language:

english

File:

PDF, 1.24 MB

english, 2018

77

Characterization of Semiconductor Heterostructures and Nanostructures || ESR of interfaces and nanolayers in semiconductor heterostructures

Stesmans, Andre

Year:

2008

Language:

english

File:

PDF, 636 KB

english, 2008

78

Two-Dimensional Crystal Grain Size Tuning in WS 2 Atomic Layer Deposition: an Insight in the Nucleation Mechanism

Groven, Benjamin, Nalin Mehta, Ankit, Bender, Hugo, Meersschaut, Johan, Nuytten, Thomas, Verdonck, Patrick, Conard, Thierry, Smets, Quentin, Schram, Tom, Schoenaers, Ben, Stesmans, Andre, Afanasiev, V

Journal:

Chemistry of Materials

Year:

2018

Language:

english

File:

PDF, 3.19 MB

english, 2018

79

Hole-doped 2D InSe for spintronic applications

Iordanidou, Konstantina, Houssa, Michel J.C., Kioseoglou, Joseph, Afanas’ev, Valeri V, Stesmans, Andre, Persson, Clas

Journal:

ACS Applied Nano Materials

Year:

2018

Language:

english

File:

PDF, 1.80 MB

english, 2018

80

Impact of MoS2 Layer Transfer on Electrostatics of MoS2/SiO2 Interface

Afanasiev, Valeri, Chiappe, Daniele, Perucchini, Marta, Houssa, Michel, Huyghebaert, Cedric, Radu, Iuliana, Stesmans, Andre

Journal:

Year:

2018

Language:

english

File:

PDF, 403 KB

english, 2018

81

Energy Band Alignment of a Monolayer MoS 2 with SiO 2 and Al 2 O 3 Insulators from Internal Photoemission

Shlyakhov, Ilya, Chai, Jianwei, Yang, Ming, Wang, Shijie, Afanas'ev, V. V., Houssa, Michel, Stesmans, Andre

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 1.96 MB

english, 2019

82

Evaluation of the effective work-function of monolayer graphene on silicon dioxide by internal photoemission spectroscopy

Trepalin, Vadim, Asselberghs, Inge, Brems, Steven, Huyghebaert, Cedric, Radu, Iuliana, Afanas'ev, Valeri, Houssa, Michel, Stesmans, Andre

Journal:

Thin Solid Films

Year:

2019

Language:

english

File:

PDF, 595 KB

english, 2019

83

Aryl-viologen pentapeptide self-assembled conductive nanofibers

Clarke, David E., Olesińska, Magdalena, Mönch, Tobias, Schoenaers, Ben, Stesmans, Andre, Scherman, Oren A.

Journal:

Chemical Communications

Year:

2019

Language:

english

File:

PDF, 6.83 MB

english, 2019

84

Degradation of sulfamethoxazole by heat-activated persulfate oxidation: elucidation of the degradation mechanism and influence of process parameters

Milh, Hannah, Schoenaers, Ben, Stesmans, Andre, Cabooter, Deirdre, Dewil, Raf

Journal:

Chemical Engineering Journal

Year:

2019

Language:

english

File:

PDF, 661 KB

english, 2019

85

Degradation of sulfamethoxazole by heat-activated persulfate oxidation: elucidation of the degradation mechanism and influence of process parameters

Milh, Hannah, Schoenaers, Ben, Stesmans, Andre, Cabooter, Deirdre, Dewil, Raf

Journal:

Chemical Engineering Journal

Year:

2019

File:

PDF, 661 KB

2019

86

Contact Resistance at MoS 2 -Based 2D Metal/Semiconductor Lateral Heterojunctions

Houssa, Michel, Iordanidou, Konstantina, Dabral, Ashish, Lu, Augustin, Pourtois, Geoffrey, Afanasiev, Valeri, Stesmans, André

Journal:

ACS Applied Nano Materials

Year:

2019

Language:

english

File:

PDF, 3.63 MB

english, 2019

87

(Invited) Stoner Ferromagnetism in Two-Dimensional Materials

Houssa, Michel, Meng, Ruishen, Iordanidou, Konstantina, Pourtois, Geoffrey, Afanas'ev, Valery V., Stesmans, Andre

Journal:

ECS Transactions

Year:

2019

Language:

english

File:

PDF, 2.63 MB

english, 2019

88

Band alignment at interfaces of 2-dimensional materials: internal photoemission analysis

Afanasiev, Valeri, Delie, Gilles, Houssa, Michel, shlyakhov, Ilya, Stesmans, Andre, Trepalin, Vadim

Journal:

Journal of Physics Condensed Matter

Year:

2020

File:

PDF, 1.27 MB

2020

89

Microcharacterization of Defects Induced in Fused Silica by High Power 3Ï UV (355nm) Laser Pulses

Stevens-Kalceff, Marion A., Wong, Joe, Stesmans, Andre

Journal:

Microscopy and Microanalysis

Year:

2001

File:

PDF, 993 KB

2001