58

Ge-doped GaxIn1−xAs LED’s in 1-μm wavelength region

Year:
1978
Language:
english
File:
PDF, 435 KB
english, 1978
59

Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate

Year:
1972
Language:
english
File:
PDF, 455 KB
english, 1972
60

A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate

Year:
1975
Language:
english
File:
PDF, 523 KB
english, 1975
61

single crystal

Year:
1998
Language:
english
File:
PDF, 107 KB
english, 1998
62

InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength

Year:
1978
Language:
english
File:
PDF, 483 KB
english, 1978
64

crystals observed by positron-annihilation spectroscopy

Year:
1998
Language:
english
File:
PDF, 203 KB
english, 1998
65

A new inorganic electron resist of high contrast

Year:
1977
Language:
english
File:
PDF, 402 KB
english, 1977
67

660 nm In0.5Ga0.5P light-emitting diodes on Si substrates

Year:
1988
Language:
english
File:
PDF, 474 KB
english, 1988
68

Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabrication

Year:
1976
Language:
english
File:
PDF, 359 KB
english, 1976
87

Preparation and Properties of Amorphous Germanium Nitride Films

Year:
1968
Language:
english
File:
PDF, 515 KB
english, 1968