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1

Tunnelling effect through a thin insulating metal-insulator-metal structure

Journal:

Thin Solid Films

Year:

1978

Language:

english

File:

PDF, 329 KB

english, 1978

2

Calculation of direct tunneling gate current through ultra-thin oxide and oxide/nitride stacks in MOSFETs and H-MOSFETs

E Cassan, P Dollfus, S Galdin, P Hesto

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 141 KB

english, 2000

3

Surface conductivity of the insulator of an MIS or MIM device

R. Castagne, P. Hesto, A. Vapaille

Journal:

Thin Solid Films

Year:

1973

Language:

english

File:

PDF, 471 KB

english, 1973

4

Thermally stimulated currents in organic monomolecular layers

J. Tanguy, P. Hesto

Journal:

Thin Solid Films

Year:

1974

Language:

english

File:

PDF, 594 KB

english, 1974

5

Physical and electrical properties of yttria-stabilized zirconia epitaxial thin films deposited by ion beam sputtering on silicon

C. Pellet, C. Schwebel, P. Hesto

Journal:

Thin Solid Films

Year:

1989

Language:

english

File:

PDF, 449 KB

english, 1989

6

Field-effect induced modulation of conduction in Langmuir-Blodgett films of ethylenedithiotetrathiofulvalene derivatives

P. Hesto, L. Aguilhon, G. Tremblay, J.P. Bourgoin, M. Vandevyver, A. Barraud

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 320 KB

english, 1994

7

Fabrication and characterization of electrostatically driven silicon microbeams

P. Attia, M. Boutry, A. Bosseboeuf, P. Hesto

Journal:

Microelectronics Journal

Year:

1998

Language:

english

File:

PDF, 408 KB

english, 1998

8

Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

P. Dollfus, S. Galdin, P. Hesto, H. J. Osten

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2001

Language:

english

File:

PDF, 301 KB

english, 2001

9

Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides

Cassan, E., Dollfus, P., Galdin, S., Hesto, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

10

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - From wave-functions to current-voltage characteristics in silicon single-nanocrystal Coulomb blockade devices

See,, Dollfus,, Galdin,, Hesto,

Year:

2004

Language:

english

File:

PDF, 117 KB

english, 2004

11

Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

Cassan, E., Galdin, S., Dollfus, P., Hesto, P.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 366 KB

english, 1999

12

MBE growth of AlxGayIn1−x−yAs for a DHBT structure

L. Goldstein, J.P. Praseuth, M.C. Joncour, J. Primot, P. Henoc, J.L. Pelouard, P. Hesto

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 345 KB

english, 1987

13

Influence of base dopant out-diffusion into the emitter in SiSiGe heterojunction bipolar transistor using Monte Carlo simulations

Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice Hesto

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 316 KB

english, 1995

14

Monte-Carlo study of the double heterojunction bipolar transistor

J-L. Pelouard, P. Hesto, R. Castagné

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 269 KB

english, 1988

15

Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects

P. Dollfus, P. Hesto

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 529 KB

english, 1993

16

Transient analysis of CML inverter using Monte Carlo simulations

Sylvie Galdin, François-Xavier Musalem, Philippe Dollfus, Mireille Mouis, Patrice Hesto

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 612 KB

english, 1996

17

Injection dependence of quasiballistic transport in GaAs at 77 K

Journal:

Surface Science Letters

Year:

1983

Language:

english

File:

PDF, 27 KB

english, 1983

18

Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

P. Dollfus, C. Bru, S. Galdin, P. Hesto

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 270 KB

english, 1992

19

Operation of SiGe channel heterojunction p-MOSFET

Philippe Dollfus, François-Xavier Musalem, Sylvie Galdin, Patrice Hesto

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

20

Electronic properties of semiconductor quantum dots for Coulomb blockade applications

J Sée, P Dollfus, S Galdin, P Hesto

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 283 KB

english, 2004

21

Dependence of the resonant frequency of micromachined gold microbeams on polarisation voltage

P. Attia, P. Hesto

Journal:

Microelectronics Journal

Year:

1998

Language:

english

File:

PDF, 364 KB

english, 1998

22

Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

A Bournel, P Dollfus, S Galdin, F.-X Musalem, P Hesto

Journal:

Solid State Communications

Year:

1997

Language:

english

File:

PDF, 485 KB

english, 1997

23

Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution

S. Barraud, P. Dollfus, S. Galdin, P. Hesto

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 247 KB

english, 2002

24

Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation

S. Galdin, M.-E. Arbey, P. Dollfus, P. Hesto

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 210 KB

english, 1999

25

Physical and magnetic properties of Co-oxide-GaAs contacts

V. Delmouly, A. Bournel, G. Tremblay, P. Hesto

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

26

Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation

Philippe Dollfus, Sylvie Galdin, Marie-Emma Arbey, Patrice Hesto

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 325 KB

1997

27

Spin-dependent transport phenomena in a HEMT

A Bournel, P Dollfus, P Bruno, P Hesto

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 126 KB

english, 1999

28

Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation

E Cassan, S Galdin, P Dollfus, P Hesto

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 157 KB

english, 1999

29

Characterisation of a low-voltage actuated gold microswitch

P Attia, G Tremblay, R Laval, P Hesto

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 269 KB

english, 1998

30

Theoretical and experimental considerations on the spin field effect transistor

A Bournel, V Delmouly, P Dollfus, G Tremblay, P Hesto

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

31

Field-Effect Transistor based on conducting Langmuir-Blodgett films of EDTTTF derivatives

J. P. Bourgoin, M. Vandevyver, A. Barraud, G. Tremblay, P. Hesto

Journal:

Molecular Engineering

Year:

1993

Language:

english

File:

PDF, 286 KB

english, 1993

32

From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters

J. Sée, P. Dollfus, S. Galdin, P. Hesto

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 818 KB

english, 2006

33

Magnetic and electrical characterizations of thin NiFe and NiFeMo films

A.-M. Nguyen, S. Cercelaru, G. Tremblay, J.-C. Perron, P. Hesto

Journal:

Thin Solid Films

Year:

1996

Language:

english

File:

PDF, 435 KB

english, 1996

34

Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

J. Sée, P. Dollfus, S. Galdin-Retailleau, P. Hesto

Journal:

Journal of Computational Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

35

A comparative study of the magnetic properties of thin permalloy films

S. Cercelaru, A.-M. Nguyen, P. Hesto, G. Tremblay, J.-C. Perron

Journal:

Journal of Magnetism and Magnetic Materials

Year:

1996

Language:

english

File:

PDF, 182 KB

english, 1996

36

Spin-dependent collection in ferromagnet/semiconductor contacts

Arnaud Bournel, Philippe Dollfus, Patrice Hesto

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

37

Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance

Dollfus, P., Galdin, S., Hesto, P., Velazquez, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 132 KB

english, 2000

38

Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Dollfus, P., Bournel, A., Galdin, S., Barraud, S., Hesto, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

39

Thin film organic channel field effect transistor

L. Aguilhon, J-P. Bourgoin, A. Barraud, P. Hesto

Journal:

Synthetic Metals

Year:

1995

Language:

english

File:

PDF, 327 KB

english, 1995

40

Injection dependence of quasiballistic transport in GaAs at 77 K

Journal:

Surface Science

Year:

1983

Language:

english

File:

PDF, 754 KB

english, 1983

41

Band offset predictions for strained group IV alloys: Si 1- x - y Ge x C y on Si(001) and Si 1- x Ge x on Si 1- z Ge z (001)

Galdin, Sylvie, Dollfus, Philippe, Aubry-Fortuna, Valérie, Hesto, Patrice, Osten, H Jörg

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

42

Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion

Brisset, C., Dollfus, P., Hesto, P., Musseau, O.

Journal:

IEEE Transactions on Nuclear Science

Year:

1994

Language:

english

File:

PDF, 564 KB

english, 1994

43

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Monte Carlo study of a self-aligned dual 50nm-gate InAlAs/InGaAs HEMT exhibiting high performances without short-channel effects

Dollfus, P., Brisset, C., Galdin, S., Hesto, P.

Year:

1993

Language:

english

File:

PDF, 316 KB

english, 1993

44

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - Negative differential conductance in silicon nanocrystal single-electron devices

See, J., Dollfus, P., Galdin, S., Hesto, P.

Year:

2004

Language:

english

File:

PDF, 294 KB

english, 2004

45

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Modeling of direct tunneling gate current in ultra-thin gate oxide MOSFETs: a comparison between simulators

Cassan, E., Galdin, S., Dollfus, P., Hesto, P.

Year:

1999

Language:

english

File:

PDF, 317 KB

english, 1999

46

Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

Musseau, O., Leray, J.L., Ferlet, V., Umbert, A., Coic, Y.M., Hesto, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

1991

Language:

english

File:

PDF, 691 KB

english, 1991

47

[IEEE . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - La Grande-Motte, France (9-12 Sept. 1991)] . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - Monte-Carlo modelling of a MISFET/SOI struck by an energetic heavy ion

Hesto, P., Musseau, O., Dollfus, P., Mouis, M., Brisset, C.

Year:

1992

Language:

english

File:

PDF, 355 KB

english, 1992

48

Simple one-dimensional model for electronic structure calculation of unbiased and biased silicon quantum dots in Coulomb blockade applications

Sée, Johann, Dollfus, Philippe, Galdin, Sylvie, Hesto, Patrice

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 1.61 MB

english, 2003

49

Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

Bournel, A., Dollfus, P., Cassan, E., Hesto, P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

50

Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation

S. Galdin, P. Dollfus, P. Hesto

Year:

1994

Language:

english

File:

PDF, 1.09 MB

english, 1994