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51

Regional, National, and International Nanoelectronics Research Programs: Topical Concentration and Gaps

Brillouët, M., Bourianoff, G.I., Cavin, R.K., Hiramoto, T., Hutchby, J.A., Ionescu, A.M., Uchida, K.

Journal:

Proceedings of the IEEE

Year:

2010

Language:

english

File:

PDF, 1.69 MB

english, 2010

52

Nanoelectronics Research for Beyond CMOS Information Processing [Scanning the Issue]

Bourianoff, G., Brillouet, M., Cavin, R. K., Hiramoto, T., Hutchby, J. A., Ionescu, A. M., Uchida, K.

Journal:

Proceedings of the IEEE

Year:

2010

Language:

english

File:

PDF, 225 KB

english, 2010

53

Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

Hutchby, J.A., Cavin, R., Zhirnov, V., Brewer, J.E., Bourianoff, G.

Journal:

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

54

Boolean Logic and Alternative Information-Processing Devices

Bourianoff, G., Brewer, J.E., Cavin, R., Hutchby, J.A., Zhirnov, V.

Journal:

Year:

2008

Language:

english

File:

PDF, 1.17 MB

english, 2008

55

Emerging Research Architectures

Cavin, R., Hutchby, J.A., Zhirnov, V., Brewer, J.E., Bourianoff, G.

Journal:

Year:

2008

Language:

english

File:

PDF, 944 KB

english, 2008

56

Emerging research logic devices

Zhirnov, V.V., Hutchby, J.A., Bourianoffls, G.I., Brewer, J.E.

Journal:

IEEE Circuits and Devices Magazine

Year:

2005

Language:

english

File:

PDF, 839 KB

english, 2005

57

Emerging research memory and logic technologies

Zhirnov, V.V., Hutchby, J.A., Bourianoff, G.I., Brewer, J.E.

Journal:

IEEE Circuits and Devices Magazine

Year:

2005

Language:

english

File:

PDF, 763 KB

english, 2005

58

Memory technology for post CMOS era

Brewer, J.E., Zhirnov, V.V., Hutchby, J.A.

Journal:

IEEE Circuits and Devices Magazine

Year:

2005

Language:

english

File:

PDF, 1.25 MB

english, 2005

59

IVA-7 DC Performance of AlxGa1-xAs/GaAs P-n-p HBT's grown by OMVPE

de Lyon, T., Casey, H.C., Jr., Enquist, P.M., Hutchby, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 178 KB

english, 1987

60

Foreword Special Issue on Integrated Circuits Technologies for RF Circuit Applications

Wang, A.Z.H., Zhao, B., Hutchby, J.A., Ostling, M., Sun, S.-C.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 592 KB

english, 2005

61

THE HEREFORD HOSPITAL PRESCRIBING STUDY

J. W. Barnett, B. Bond, J. P. Hutchby, J. B. Wood

Journal:

Journal of Clinical Pharmacy and Therapeutics

Year:

1978

Language:

english

File:

PDF, 201 KB

english, 1978

62

Myocardial infarctions in the catchment area of the hereford hospitals: A community study

John B. Wood, John H. Ross, Basil E. Miles, J. Peter Hutchby

Journal:

Year:

1978

Language:

english

File:

PDF, 880 KB

english, 1978

63

Comparative studies of ion-implant Josephson-effect structures

Kirschman, R., Hutchby, J., Burgess, J., McNamara, R., Notarys, H.

Journal:

IEEE Transactions on Magnetics

Year:

1977

Language:

english

File:

PDF, 444 KB

english, 1977

64

[Springer Theses] Novel Synthetic Chemistry of Ureas and Amides || Urea Hydrolysis

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

65

Switching Pathways: Room-Temperature Neutral Solvolysis and Substitution of Amides

Dr. Marc Hutchby, Dr. Chris E. Houlden, Dr. Mairi F. Haddow, Dr. Simon N. G. Tyler, Prof. Dr. Guy C. Lloyd-Jones, Prof. Dr. Kevin I. Booker-Milburn

Journal:

Angewandte Chemie

Year:

2012

Language:

english

File:

PDF, 375 KB

english, 2012

66

Limits to binary logic switch scaling - a gedanken model

Zhirnov, V.V., Cavin, R.K., III, Hutchby, J.A., Bourianoff, G.I.

Journal:

Proceedings of the IEEE

Year:

2003

Language:

english

File:

PDF, 372 KB

english, 2003

67

High-performance interconnects: an integration overview

Havemann, R.H., Hutchby, J.A.

Journal:

Proceedings of the IEEE

Year:

2001

Language:

english

File:

PDF, 1.11 MB

english, 2001

68

MOSFET AND FRONT-END PROCESS INTEGRATION: SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP

ZEITZOFF, PETER M., HUTCHBY, JAMES A., HUFF, HOWARD R.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2002

Language:

english

File:

PDF, 3.73 MB

english, 2002

69

[Springer Theses] Novel Synthetic Chemistry of Ureas and Amides || Introduction

Year:

2013

Language:

english

File:

PDF, 3.95 MB

english, 2013

70

[Springer Theses] Novel Synthetic Chemistry of Ureas and Amides || || Front_matter

Year:

2013

Language:

english

File:

PDF, 187 KB

english, 2013

71

Rhetorical Strategies in Audience Participation Debates on Radio and TV

Journal:

Research on Language and Social Interaction

Year:

1999

Language:

english

File:

PDF, 136 KB

english, 1999

72

Visible light emission from quantized planar Ge structures

Venkatasubramanian, R., Malta, D. P., Timmons, M. L., Hutchby, J. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 619 KB

english, 1991

73

[Springer Theses] Novel Synthetic Chemistry of Ureas and Amides || Amide Hydrolysis

Year:

2013

Language:

english

File:

PDF, 3.07 MB

english, 2013

74

ENERGY BARRIERS, DEMONS, AND MINIMUM ENERGY OPERATION OF ELECTRONIC DEVICES

CAVIN, RALPH K., ZHIRNOV, VICTOR V., HUTCHBY, JAMES A., BOURIANOFF, GEORGE I.

Journal:

Fluctuation and Noise Letters

Year:

2005

Language:

english

File:

PDF, 396 KB

english, 2005

75

[IEEE IEEE Winter Simulation Conference - Washington, DC, USA (13-16 Dec. 1998)] 1998 Winter Simulation Conference. Proceedings (Cat. No.98CH36274) - Operational modeling and simulation in semiconductor manufacturing

Fowler, J.W., Fu, M.C., Schruben, L.W., Brown, S., Chance, F., Cunningham, S., Hilton, C., Janakiram, M., Stafford, R., Hutchby, J.

Year:

1998

Language:

english

File:

PDF, 676 KB

english, 1998

76

Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs

Slater, D.B., Enquist, P.M., Najjar, F.E., Chen, M.Y., Hutchby, J.A., Morris, A.S., Trew, R.J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 298 KB

english, 1991

77

Monolithic integration of complementary HBTs by selective MOVPE

Slater, D.B., Enquist, P.M., Najjar, F.E., Chen, M.Y., Hutchby, J.A.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 264 KB

english, 1990

78

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Demonstration of an n-channel inversion mode GaAs MISFET

Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., Hutchby, J.A.

Year:

1989

Language:

english

File:

PDF, 156 KB

english, 1989

79

[IEEE The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA (7-11 Oct. 1991)] The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - High-temperature performance and radiation resistance of high-efficiency Ge and Si/sub 0.07/Ge/sub 0.93/ solar cells on lightweight Ge substrates

Venkatasubramanian, R., Timmons, M.L., Pickett, R.T., Colpitts, T.S., Hancock, J.A., Hills, J.S., Hutchby, J.A.

Year:

1991

Language:

english

File:

PDF, 348 KB

english, 1991

80

[IEEE Fifteenth International Conference on Thermoelectrics. ICT '96 - Pasadena, CA, USA (26-29 March 1996)] Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 - Experimental evidence of high power factors and low thermal conductivity in Bi/sub 2/Te/sub 3//Sb/sub 2/Te/sub 3/ superlattice thin-films

Venkatasubramanian, R., Colpitts, T., Watko, E., Hutchby, J.

Year:

1996

Language:

english

File:

PDF, 523 KB

english, 1996

81

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (5-7 Aug. 1991)] [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs

Slater, D.B., Enquist, P.M., Hutchby, J.A., Morris, A.S., Trew, R.J.

Year:

1991

Language:

english

File:

PDF, 397 KB

english, 1991

82

[IEEE Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference - Las Vegas, NV, USA (26-30 Sept. 1988)] Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference - Monolithic AlGaAs/Ge cascade solar cells

Timmons, M.L., Hutchby, J.A., Wagner, D.K., Tracy, J.M.

Year:

1988

Language:

english

File:

PDF, 554 KB

english, 1988

83

[IEEE 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - Waikoloa, HI, USA (5-9 Dec. 1994)] Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) - GaAs and Al/sub 0.2/Ga/sub 0.8/As solar cells with an indirect-bandgap Al/sub 0.8/Ga/sub 0.2/As emitter-heterojunction cells

Venkatasubramanian, R., Timmons, M.L., Hutchby, J.A., Field, H., Emery, K.

Year:

1994

Language:

english

File:

PDF, 292 KB

english, 1994

84

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1995)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Performance evaluation of heterojunction bipolar transistors designed for high optical gain

Enquist, P., Paolella, A., Morris, A.S., Reed, F.E., DeBarros, L., Tessmer, A.J., Hutchby, J.A.

Year:

1995

Language:

english

File:

PDF, 623 KB

english, 1995

85

Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

Enquist, P.M., Slater, D.B., Hutchby, J.A., Morris, A.S., Trew, R.J.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 333 KB

english, 1993

86

[IEEE IEEE Conference on Photovoltaic Specialists - Kissimmee, FL, USA (21-25 May 1990)] IEEE Conference on Photovoltaic Specialists - Development of low-bandgap Ge and Si/sub 0.07/Ge/sub 0.93/ solar cells for monolithic and mechanically-stacked cascade applications

Venkatasubramanian, R., Timmons, M.L., Pickett, R.T., Colpitts, T.S., Hils, J.S., Hutchby, J.A., Hes, P.A., Chu, C.L.

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

87

Temperature dependence of electrical properties in Be-implanted semi-insulating GaAs

Hutchby, J. A., Vaidyanathan, K. V.

Journal:

Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 667 KB

english, 1977

88

Pnp HBT with 66 GHz f/sub max/

D. Slater, P. Enquist, J. Hutchby, A. Morris, R. Trew

Year:

1994

Language:

english

File:

PDF, 269 KB

english, 1994

89

High−efficiency graded band−gap AlxGa1−xAs−GaAs solar cell

Hutchby, James A.

Journal:

Applied Physics Letters

Year:

1975

Language:

english

File:

PDF, 474 KB

english, 1975

90

Millimeter-wave AlGaAs/GaAs p-n-p HBT

Slater, D.B., Enquist, P.M., Chen, M.Y., Hutchby, J.A., Morris, A.S., Trew, R.J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 289 KB

english, 1991

91

Theoretical analysis of AlxGa1−xAs-GaAs graded band-gap solar cell

Hutchby, James A., Fudurich, Richard L.

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 1.01 MB

english, 1976

92

Low emitter resistance GaAs based HBT's without InGaAs caps

Slater, D.B., Enquist, P.M., Hutchby, J.A., Morris, A.S., Trew, R.J.

Journal:

IEEE Electron Device Letters

Year:

1994

Language:

english

File:

PDF, 353 KB

english, 1994

93

Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

de Lyon, T. J., Casey, H. C., Massoud, H. Z., Timmons, M. L., Hutchby, J. A., Dietrich, H. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 608 KB

english, 1988

94

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 - San Diego, CA, USA (29 Oct.-1 Nov. 1995)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 - Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links

Lovejoy, M.L., Patrizi, G.A., Enquist, P.M., Rose, B.H., Slater, D.B., Shul, R.J., Carson, R.F., Craft, D.C., Rieger, D.J., Hutchby, J.A.

Year:

1995

Language:

english

File:

PDF, 661 KB

english, 1995

95

[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Physical basis and characteristics of light emission from quantized planar Ge structures

Venkatasubramanian, R., Malta, D.P., Timmons, M.L., Hutchby, J.A.

Year:

1991

Language:

english

File:

PDF, 262 KB

english, 1991

96

Ideal electronic properties of a p-Ge/p-Al0.85Ga0.15As interface

Venkatasubramanian, R., Timmons, M. L., Hutchby, J. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 629 KB

english, 1991

97

Stopping cross sections for 0.25–3.0-MeV 4He ions in cadmium sulfide

Miller, W. E., Hutchby, J. A.

Journal:

Journal of Applied Physics

Year:

1975

Language:

english

File:

PDF, 617 KB

english, 1975

98

Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1−xAs heterojunction bipolar transistors

de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 595 KB

english, 1989

99

[IEEE Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Louisville, KY, USA (10-14 May 1993)] Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - 15.8%-efficient (1-sun, AM1.5G) GaAs solar cell on optical-grade polycrystalline Ge substrate

Venkatasubramanian, R., Timmons, M.L., Sharps, P.R., Hutchby, J.A.

Year:

1993

Language:

english

File:

PDF, 288 KB

english, 1993

100

Theoretical optimization and parametric study of n-on-p AlxGa1−xAs-GaAs graded band-gap solar cell

J. A. Hutchby, R. L. Fudurich

Year:

1976

Language:

english

File:

PDF, 722 KB

english, 1976