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101

Evaluation of arginine metabolism for the analysis of M1/M2 macrophage activation in human clinical specimens

Geelhaar-Karsch, Anika, Schinnerling, Katina, Conrad, Kristina, Friebel, Julian, Allers, Kristina, Schneider, Thomas, Moos, Verena

Journal:

Inflammation Research

Year:

2013

Language:

english

File:

PDF, 245 KB

english, 2013

102

Droplet Bulge Effect on the Formation of Nanowire Side Facets

Breuer, Steffen, Feiner, Lou-Fé, Geelhaar, Lutz

Journal:

Crystal Growth & Design

Year:

2013

Language:

english

File:

PDF, 320 KB

english, 2013

103

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Consonni, V., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 732 KB

english, 2010

104

RECENT LIQUID CRYSTAL MATERIAL DEVELOPMENT FOR ACTIVE MATRIX DISPLAYS

Tarumi, K., Bremer, M., Geelhaar, T.

Journal:

Annual Review of Materials Science

Year:

1997

Language:

english

File:

PDF, 552 KB

english, 1997

105

Luminous Efficiency of Axial In x Ga 1– x N/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Marquardt, Oliver, Hauswald, Christian, Wölz, Martin, Geelhaar, Lutz, Brandt, Oliver

Journal:

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

106

Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy

Kamimura, Jumpei, Bogdanoff, Peter, Lähnemann, Jonas, Hauswald, Christian, Geelhaar, Lutz, Fiechter, Sebastian, Riechert, Henning

Journal:

Journal of the American Chemical Society

Year:

2013

Language:

english

File:

PDF, 1.70 MB

english, 2013

107

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Brandt, Oliver, Pfüller, Carsten, Chèze, Caroline, Geelhaar, Lutz, Riechert, Henning

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 701 KB

english, 2010

108

Cover Picture: 125 Years of Liquid Crystals-A Scientific Revolution in the Home (Angew. Chem. Int. Ed. 34/2013)

Geelhaar, Thomas, Griesar, Klaus, Reckmann, Bernd

Journal:

Angewandte Chemie International Edition

Year:

2013

File:

PDF, 345 KB

2013

109

[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETs

Weber, W., Graham, A., Duesberg, G., Liebau, M., Cheze, C., Geelhaar, L., Unger, E., Pamler, W., Hoenlein, W., Riechert, H., Kreupl, F., Lugli, P.

Year:

2006

Language:

english

File:

PDF, 684 KB

english, 2006

110

Control over the Number Density and Diameter of GaAs Nanowires on Si(111) Mediated by Droplet Epitaxy

Somaschini, Claudio, Bietti, Sergio, Trampert, Achim, Jahn, Uwe, Hauswald, Christian, Riechert, Henning, Sanguinetti, Stefano, Geelhaar, Lutz

Journal:

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

111

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

Biermanns, Andreas, Carbone, Dina, Breuer, Steffen, Jacques, Vincent L. R., Schulli, Tobias, Geelhaar, Lutz, Pietsch, Ullrich

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2013

Language:

english

File:

PDF, 398 KB

english, 2013

112

Biological denitration of propylene glycol dinitrate byBacillussp. ATCC 51912

W. -Q. Sun, M. Meng, G. Kumar, L. A. Geelhaar…

Journal:

Applied Microbiology and Biotechnology

Year:

1996

Language:

english

File:

PDF, 515 KB

english, 1996

113

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Weber, Walter M., Geelhaar, Lutz, Graham, Andrew P., Unger, Eugen, Duesberg, Georg S., Liebau, Maik, Pamler, Werner, Chèze, Caroline, Riechert, Henning, Lugli, Paolo, Kreupl, Franz

Journal:

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

114

Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)

Dimakis, Emmanouil, Lähnemann, Jonas, Jahn, Uwe, Breuer, Steffen, Hilse, Maria, Geelhaar, Lutz, Riechert, Henning

Journal:

Crystal Growth & Design

Year:

2011

Language:

english

File:

PDF, 3.20 MB

english, 2011

115

Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy

Wölz, Martin, Ramsteiner, Manfred, Kaganer, Vladimir M., Brandt, Oliver, Geelhaar, Lutz, Riechert, Henning

Journal:

Year:

2013

Language:

english

File:

PDF, 2.19 MB

english, 2013

116

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

Sabelfeld, K. K., Kaganer, V. M., Limbach, F., Dogan, P., Brandt, O., Geelhaar, L., Riechert, H.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 943 KB

english, 2013

117

In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Dimakis, Emmanouil, Ramsteiner, Manfred, Huang, Chang-Ning, Trampert, Achim, Davydok, Anton, Biermanns, Andreas, Pietsch, Ullrich, Riechert, Henning, Geelhaar, Lutz

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

118

Publisher's Note: Scaling thermodynamic model for the self-induced nucleation of GaN nanowires [Phys. Rev. B 85 , 165317 (2012)]

Dubrovskii, Vladimir G., Consonni, Vincent, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning

Journal:

Physical Review B

Year:

2012

File:

PDF, 23 KB

2012

119

Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires

Chèze, Caroline, Geelhaar, Lutz, Trampert, Achim, Brandt, Oliver, Riechert, Henning

Journal:

Year:

2010

Language:

english

File:

PDF, 446 KB

english, 2010

120

Quenching of the E[sub 2] phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

Ramsteiner, M., Brandt, O., Kusch, P., Breuer, S., Reich, S., Geelhaar, L.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

121

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

Dogan, Pinar, Brandt, Oliver, Pfüller, Carsten, Lähnemann, Jonas, Jahn, Uwe, Roder, Claudia, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning

Journal:

Crystal Growth & Design

Year:

2011

Language:

english

File:

PDF, 2.24 MB

english, 2011

122

Local charge transport in nanoscale amorphous and crystalline regions of high-k (Zr0[sub 2])[sub 0.8](Al[sub 2]O[sub 3])[sub 0.2] thin films

Martin, Dominik, Grube, Matthias, Weber, Walter M., Rüstig, Jürgen, Bierwagen, Oliver, Geelhaar, Lutz, Riechert, Henning

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 373 KB

english, 2009

123

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Puttisong, Yuttapoom, Buyanova, Irina A., Ptak, Aaron J., Tu, Charles W., Geelhaar, Lutz, Riechert, Henning, Chen, Weimin M.

Journal:

Advanced Materials

Year:

2013

Language:

english

File:

PDF, 783 KB

english, 2013

124

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

Oliveira, Myriano H., Schumann, Timo, Gargallo-Caballero, Raquel, Fromm, Felix, Seyller, Thomas, Ramsteiner, Manfred, Trampert, Achim, Geelhaar, Lutz, Lopes, Joao Marcelo J., Riechert, Henning

Journal:

Year:

2013

Language:

english

File:

PDF, 1.54 MB

english, 2013

125

GaAs–Fe 3 Si Core–Shell Nanowires: Nanobar Magnets

Hilse, Maria, Herfort, Jens, Jenichen, Bernd, Trampert, Achim, Hanke, Michael, Schaaf, Peter, Geelhaar, Lutz, Riechert, Henning

Journal:

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

126

Correlation between In content and emission wavelength of In x Ga 1− x N/GaN nanowire heterostructures

Wölz, M, Lähnemann, J, Brandt, O, Kaganer, V M, Ramsteiner, M, Pfüller, C, Hauswald, C, Huang, C N, Geelhaar, L, Riechert, H

Journal:

Year:

2012

Language:

english

File:

PDF, 708 KB

english, 2012

127

Minimizing the impact of surface potentials in axial In x Ga 1− x N/GaN nanowire heterostructures by reducing their diameter

Marquardt, O, Geelhaar, L, Brandt, O

Journal:

Journal of Physics D Applied Physics

Year:

2014

Language:

english

File:

PDF, 308 KB

english, 2014

128

Effects of nanowire coalescence on their structural and optical properties on a local scale

Consonni, V., Knelangen, M., Jahn, U., Trampert, A., Geelhaar, L., Riechert, H.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 509 KB

english, 2009

129

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Musolino, M., Tahraoui, A., Limbach, F., Lähnemann, J., Jahn, U., Brandt, O., Geelhaar, L., Riechert, H.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 2.49 MB

english, 2014

130

High-frequency acoustic charge transport in GaAs nanowires

Büyükköse, S, Hernández-Mínguez, A, Vratzov, B, Somaschini, C, Geelhaar, L, Riechert, H, van der Wiel, W G, Santos, P V

Journal:

Year:

2014

Language:

english

File:

PDF, 2.89 MB

english, 2014

131

Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Dimakis, Emmanouil, Jahn, Uwe, Ramsteiner, Manfred, Tahraoui, Abbes, Grandal, Javier, Kong, Xiang, Marquardt, Oliver, Trampert, Achim, Riechert, Henning, Geelhaar, Lutz

Journal:

Year:

2014

Language:

english

File:

PDF, 4.24 MB

english, 2014

132

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

Jahn, U., Lähnemann, J., Pfüller, C., Brandt, O., Breuer, S., Jenichen, B., Ramsteiner, M., Geelhaar, L., Riechert, H.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 4.77 MB

english, 2012

133

Acoustically Driven Photon Antibunching in Nanowires

Hernández-Mínguez, A., Möller, M., Breuer, S., Pfüller, C., Somaschini, C., Lazić, S., Brandt, O., García-Cristóbal, A., de Lima, M. M., Cantarero, A., Geelhaar, L., Riechert, H., Santos, P. V.

Journal:

Year:

2012

Language:

english

File:

PDF, 3.55 MB

english, 2012

134

[IEEE 2009 3rd International Conference on Signals, Circuits and Systems (SCS 2009) - Medenine, Tunisia (2009.11.6-2009.11.8)] 2009 3rd International Conference on Signals, Circuits and Systems (SCS) - Investigation of zirconium oxide based high-k dielectrics for future memory applications

Grube, Matthias, Martin, Dominik, Weber, Walter M., Bierwagen, Oliver, Geelhaar, Lutz, Riechert, Henning

Year:

2009

Language:

english

File:

PDF, 508 KB

english, 2009

135

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

Amari, H, Lari, L, Zhang, H Y, Geelhaar, L, Chèze, C, Kappers, M J, McAleese, C, Humphreys, C J, Walther, T

Journal:

Journal of Physics Conference Series

Year:

2011

Language:

english

File:

PDF, 5.22 MB

english, 2011

136

[IEEE 2002 Digest of the LEOS Summer Topical Meetings - Mont Tremblant, Que., Canada (15-17 July 2002)] IEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and Microcavity Lasers. - GaInNAs quantum well VCSELs

Steinle, G., Ramakrishnan, A., Supper, D., Kristen, G., Pfeiffer, J., Riechert, H., Geelhaar, L., Degen, Ch., Ebbinghaus, G., Wolf, H.D.

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

137

[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - 1.3 μm VCSELs for fiber-optical communication systems

Riechert, H., Geelhaar, L., Ebbinghaus, G., Lima, A., Ramakrishnan, A.

Year:

2003

Language:

english

File:

PDF, 271 KB

english, 2003

138

[IEEE NUSOD '05. 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005. - Berlin, Germany (19-22 Sept., 2005)] NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005. - Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation

Altermatt, P.P., Geelhaar, F., Trupke, T., Dai, X., Neisser, A., Daub, E.

Year:

2005

Language:

english

File:

PDF, 209 KB

english, 2005

139

alloys

Ivanova, L., Eisele, H., Vaughan, M. P., Ebert, Ph., Lenz, A., Timm, R., Schumann, O., Geelhaar, L., Dähne, M., Fahy, S., Riechert, H., O’Reilly, E. P.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 281 KB

english, 2010

140

[IEEE 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Vancouver, BC, Canada (2013.08.19-2013.08.22)] 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Influence of surface and polarization potentials on the electronic and optical properties of InxGa1−xN/GaN axial nanowire heterostructures

Marquardt, Oliver, Hauswald, Christian, Wolz, Martin, Geelhaar, Lutz, Brandt, Oliver

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

141

Photoluminescence and x-ray photoelectron spectroscopy study of S-passivated InGaAs(001)

Geelhaar, L., Bartynski, R. A., Ren, F., Schnoes, M., Buckley, D. N.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

142

Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis

Altermatt, P. P., Geelhaar, F., Trupke, T., Dai, X., Neisser, A., Daub, E.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 318 KB

english, 2006

143

Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

Pfüller, Carsten, Brandt, Oliver, Grosse, Frank, Flissikowski, Timur, Chèze, Caroline, Consonni, Vincent, Geelhaar, Lutz, Grahn, Holger T., Riechert, Henning

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 375 KB

english, 2010

144

Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires

Breuer, S., Hilse, M., Trampert, A., Geelhaar, L., Riechert, H.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 652 KB

english, 2010

145

Atomically resolved structure of InAs quantum dots

Márquez, J., Geelhaar, L., Jacobi, K.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 503 KB

english, 2001

146

Morphology and optical properties of InAs(N) quantum dots

Schumann, O., Geelhaar, L., Riechert, H., Cerva, H., Abstreiter, G.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 1.26 MB

english, 2004

147

[IEEE 2014 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Palma de Mallorca, Spain (2014.9.1-2014.9.4)] Numerical Simulation of Optoelectronic Devices, 2014 - Minimizing the influence of surface potentials in axial InxGa1−xN/GaN nanowire heterostructures by reducing their diameter

Marquardt, Oliver, Geelhaar, Lutz, Brandt, Oliver

Year:

2014

Language:

english

File:

PDF, 1.07 MB

english, 2014

148

Band gap of wurtzite GaAs: A resonant Raman study

Kusch, Patryk, Breuer, Steffen, Ramsteiner, Manfred, Geelhaar, Lutz, Riechert, Henning, Reich, Stephanie

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 392 KB

english, 2012

149

Physical origin of the incubation time of self-induced GaN nanowires

Consonni, V., Trampert, A., Geelhaar, L., Riechert, H.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 517 KB

english, 2011

150

Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

Rubel, O., Galluppi, M., Baranovskii, S. D., Volz, K., Geelhaar, L., Riechert, H., Thomas, P., Stolz, W.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 348 KB

english, 2005

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