1

PbSe heteroepitaxy by the hot wall technique

Year:
1975
Language:
english
File:
PDF, 297 KB
english, 1975
2

Cognitive Deficits before Treatment among Patients with Brain Tumors

Year:
2000
Language:
english
File:
PDF, 439 KB
english, 2000
3

Growth of PbS1-xSex single crystals by sublimation

Year:
1974
Language:
english
File:
PDF, 843 KB
english, 1974
4

Sublimation growth of PbSe crystals with controlled carrier concentration

Year:
1976
Language:
english
File:
PDF, 684 KB
english, 1976
6

Optical switching in PbSnSe at low temperature

Year:
1986
Language:
english
File:
PDF, 274 KB
english, 1986
8

Application of semiconductor radiation detectors and diode lasers for infrared spectroscopy

Year:
1985
Language:
english
File:
PDF, 559 KB
english, 1985
12

Observation of Localized Deep Levels in PbSe

Year:
1980
Language:
english
File:
PDF, 282 KB
english, 1980
13

Properties of PbS1−xSexepilayers deposited onto PbS substrates by hot-wall epitaxy

Year:
1975
Language:
english
File:
PDF, 1.15 MB
english, 1975
14

N-type PbS and PbS1−xSexlayers prepared by the hot-wall epitaxy

Year:
1977
Language:
english
File:
PDF, 774 KB
english, 1977
15

Recent advances in lead-chalcogenide diode lasers

Year:
1979
Language:
english
File:
PDF, 1.66 MB
english, 1979
18

Comparison of the junction resistance of (PbSn)Te and (PbSn)Se infrared detector diodes

Year:
1978
Language:
english
File:
PDF, 300 KB
english, 1978
20

Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitors

Year:
1969
Language:
english
File:
PDF, 687 KB
english, 1969
23

Editorial

Year:
1993
Language:
german
File:
PDF, 427 KB
german, 1993
24

Growth of lead sulfide single crystals by the bridgman method

Year:
1975
Language:
english
File:
PDF, 295 KB
english, 1975
25

Different mechanisms affecting the inversion layer transient response

Year:
1968
Language:
english
File:
PDF, 736 KB
english, 1968
28

Quantum noise-limited FM spectroscopy with a lead-salt diode laser

Year:
1989
Language:
english
File:
PDF, 1.65 MB
english, 1989
30

Pb1-xSnxSe/Pb1-x-yEuySn xSe corrugated diode lasers

Year:
1989
Language:
english
File:
PDF, 1.65 MB
english, 1989
33

Surface carrier generation including tunnel transitions

Year:
1969
Language:
english
File:
PDF, 328 KB
english, 1969
34

Properties of diffused PbSnSe homojunction diode lasers

Year:
1981
Language:
english
File:
PDF, 2.29 MB
english, 1981
35

Electron and Hole-Capture Coefficient of Indium in Silicon at Low Temperatures

Year:
1968
Language:
english
File:
PDF, 718 KB
english, 1968
36

Erratum: Electron and Hole-Capture Coefficient of Indium in Silicon at Low Temperatures

Year:
1968
Language:
english
File:
PDF, 281 KB
english, 1968
37

Double-heterostructure PbS-PbSe-PbS lasers with cw operation up to 120 K

Year:
1976
Language:
english
File:
PDF, 369 KB
english, 1976
38

Physics and applications of IV-VI compound semiconductor lasers

Year:
1990
Language:
english
File:
PDF, 820 KB
english, 1990
42

LIGHT MODULATIONS BY THIN CdS PLATELET OSCILLATORS

Year:
1971
Language:
english
File:
PDF, 556 KB
english, 1971
43

Double heterojunction PbS-PbS1−xSex-PbS laser diodes with cw operation up to 96 K

Year:
1976
Language:
english
File:
PDF, 509 KB
english, 1976
47

CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE

Year:
1967
Language:
english
File:
PDF, 376 KB
english, 1967
48

NO spectroscopy at 100 °K with a PbS0.4Se0.6 diode laser

Year:
1974
Language:
english
File:
PDF, 328 KB
english, 1974