R Piotrzkowski: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

51

Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs

Piotrzkowski, R., Suski, T., Wiśniewski, P., Ploog, K., Knecht, J.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 705 KB

english, 1990

52

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Suski, T., Litwin-Staszewska, E., Piotrzkowski, R., Czernecki, R., Krysko, M., Grzanka, S., Nowak, G., Franssen, G., Dmowski, L. H., Leszczynski, M., Perlin, P., Łucznik, B., Grzegory, I., Jakieła, R.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 297 KB

english, 2008

53

Central μ + μ − production via photon-photon fusion in proton-proton collisions with proton dissociation

G. G. Da Silveira, L. Forthomme, K. Piotrzkowski, W. Schäfer, A. Szczurek

Year:

2015

Language:

english

File:

PDF, 4.42 MB

english, 2015

54

The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects

Piotrzkowski, R., Litwin-Staszewska, E., Robert, Jean-Louis

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 409 KB

1994

55

Centralμ+μ−production via photon-photon fusion in proton-proton collisions with proton dissociation

da Silveira, Gustavo G., Forthomme, Laurent, Piotrzkowski, Krzysztof, Schäfer, Wolfgang, Szczurek, Antoni

Journal:

Journal of High Energy Physics

Year:

2015

Language:

english

File:

PDF, 4.42 MB

english, 2015

56

[AIP DEEP INELASTIC SCATTERING: 13th International Workshop on Deep Inelastic Scattering; DIS 2005 - Madison, Wisconsin (USA) (27 April - 1 May 200)] AIP Conference Proceedings - High Energy Photon Interactions at the LHC

Piotrzkowski, K.

Year:

2005

Language:

english

File:

PDF, 618 KB

english, 2005

57

AIP Conference Proceedings [AIP SUSY09: 7th International Conference on Supersymmetry and the Unification of Fundamental Interactions - Boston (Massachusetts) (5–10 June 2008)] - Two-photon exclusive production of supersymmetric pairs at the LHC

Piotrzkowski, K., Schul, N., Alverson, George, Nath, Pran, Nelson, Brent

Year:

2010

Language:

english

File:

PDF, 911 KB

english, 2010

58

[AIP DEEP INELASTIC SCATTERING: 13th International Workshop on Deep Inelastic Scattering; DIS 2005 - Madison, Wisconsin (USA) (27 April - 1 May 200)] AIP Conference Proceedings - Single W Boson Production at HERA

Piotrzkowski, K.

Year:

2005

Language:

english

File:

PDF, 406 KB

english, 2005

59

Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect

Piotrzkowski, R, Litwin-Staszewska, E, Lorenzini, P, Robert, J L

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 359 KB

english, 1992

60

Te-related DX centre of GaAs and AlGaAs

Wisniewski, P, Litwin-Staszewska, E, Suski, T, Konczewicz, L, Piotrzkowski, R, Stankiewicz, W

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 301 KB

english, 1991

61

Dependence of mobility on DX-centre configuration in GaAlAs alloy

Piotrzkowski, R, Konczewicz, L, Litwin-Staszewska, E, Robert, J L, Lorenzini, P

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 267 KB

english, 1991

62

Pressure assisted studies of thermal emission from resonant DX centres: new evidence for multi-level structure of Si-DX centre in GaAlAs

Piotrzkowski, R, Litwin-Staszewska, E, Robert, J L, Mosser, V, Lorenzini, P

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 385 KB

english, 1991

63

Evidence for the negative charge state of DX centres in AlxGa1-xAs:Si

V. Mosser, S. Contreras, R. Piotrzkowski, P. Lorenzini, J. L. Robert, J. F. Rochette, A. Marty

Year:

1991

Language:

english

File:

PDF, 356 KB

english, 1991

64

Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies

S. Contreras, V. Mosser, R. Piotrzkowski, P. Lorenzini, J. Sicart, P. Jeanjean, J. L. Robert, W. Zawadzki

Year:

1991

Language:

english

File:

PDF, 261 KB

english, 1991

65

DX centre in Si-doped Al x Ga 1-x As: charge state and capture mechanism

Mosser, V, Contreras, S, Lorenzini, P, Robert, J L, Piotrzkowski, R, Zawadzki, W

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 436 KB

english, 1992

66

Metastability of the resonant Si level in Ga 0.86 Al 0.14 As

Piotrzkowski, R, Robert, J L, Azema, S, Alexandre, F

Journal:

Semiconductor Science and Technology

Year:

1989

Language:

english

File:

PDF, 258 KB

english, 1989

67

Parallel conduction in p-type gallium nitride homo-structures

Litwin-Staszewska, E, Konczewicz, L, Piotrzkowski, R, Dmowski, L, Czernecki, R, Prystawko, P

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 466 KB

english, 2008

68

Pressure studies of metastable Si and S donors in GaAs

Wiśniewski, P., Piotrzkowski, R., Suski, T.

Journal:

High Pressure Research

Year:

1990

Language:

english

File:

PDF, 267 KB

english, 1990

69

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Iwinska, Malgorzata, Piotrzkowski, Ryszard, Litwin-Staszewska, Elzbieta, Sochacki, Tomasz, Amilusik, Mikolaj, Fijalkowski, Michal, Lucznik, Boleslaw, Bockowski, Michal

Journal:

Applied Physics Express

Year:

2017

Language:

english

File:

PDF, 844 KB

english, 2017

70

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Iwinska, M., Piotrzkowski, R., Litwin-Staszewska, E., Ivanov, V. Yu., Teisseyre, H., Amilusik, M., Lucznik, B., Fijalkowski, M., Sochacki, T., Takekawa, N., Murakami, H., Bockowski, M.

Journal:

Journal of Crystal Growth

Year:

2017

Language:

english

File:

PDF, 705 KB

english, 2017

71

Crystal growth of HVPE-GaN doped with germanium

Iwinska, M., Takekawa, N., Ivanov, V.Yu., Amilusik, M., Kruszewski, P., Piotrzkowski, R., Litwin-Staszewska, E., Lucznik, B., Fijalkowski, M., Sochacki, T., Teisseyre, H., Murakami, H., Bockowski, M.

Journal:

Journal of Crystal Growth

Year:

2017

Language:

english

File:

PDF, 887 KB

english, 2017

72

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

Bockowski, Michal, Iwinska, M, Amilusik, M, Lucznik, B, Fijalkowski, M, Litwin-Staszewska, E, Piotrzkowski, R, Sochacki, Tomasz

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 617 KB

english, 2017

73

[WORLD SCIENTIFIC Electromagnetic Probes of Fundamental Physics - The Workshop - Erice, Italy (16 – 21 October 2001)] Electromagnetic Probes of Fundamental Physics - HIGH ENERGY TWO-PHOTON INTERACTIONS AT THE LHC

PIOTRZKOWSKI, KRZYSZTOF

Language:

english

File:

PDF, 346 KB

english

74

Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Bockowski, M., Iwinska, M., Amilusik, M., Lucznik, B., Fijalkowski, M., Litwin-Staszewska, E., Piotrzkowski, R., Sochacki, T.

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 969 KB

english, 2018

75

Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds

Iwinska, Malgorzata, Zajac, Marcin, Lucznik, Boleslaw, Fijalkowski, Michal, Amilusik, Mikolaj, Sochacki, Tomasz, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grzegory, Izabella, Bockowski, Mich

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 1.18 MB

english, 2019

76

Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds

Iwinska, Malgorzata, Zajac, Marcin, Lucznik, Boleslaw, Fijalkowski, Michal, Amilusik, Mikolaj, Sochacki, Tomasz, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grzegory, Izabella, Bockowski, Mich

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 1.18 MB

2019

77

Self-compensation of carbon in HVPE-GaN:C

Piotrzkowski, R., Zajac, M., Litwin-Staszewska, E., Bockowski, M.

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.31 MB

2020

78

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Konczewicz, L., Juillaguet, S., Litwin-Staszewska, E., Piotrzkowski, R., Peyre, H., Matta, S., Al Khalfioui, M., Leroux, M., Damilano, B., Brault, J., Contreras, S.

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 2.28 MB

2020