55

Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy

Year:
2004
Language:
english
File:
PDF, 392 KB
english, 2004
57

In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

Year:
2005
Language:
english
File:
PDF, 286 KB
english, 2005
58

Growth of low-threshold GaInNAs/GaAs triple-quantum-well lasers

Year:
2007
Language:
english
File:
PDF, 275 KB
english, 2007
66

Molecular beam epitaxy of GaInNAs by using solid source arsenic

Year:
2001
Language:
english
File:
PDF, 129 KB
english, 2001
67

Gas-source MBE of GaInNAs for long-wavelength laser diodes

Year:
1998
Language:
english
File:
PDF, 318 KB
english, 1998
71

GaNAs grown by gas source molecular beam epitaxy

Year:
1997
Language:
english
File:
PDF, 293 KB
english, 1997
74

Isomerisation of quillaic acid and echinocystic acid with hydrochloric acid

Year:
1969
Language:
english
File:
PDF, 185 KB
english, 1969
80

Studies of quantum levels in GaInNAs single quantum wells

Year:
2006
Language:
english
File:
PDF, 189 KB
english, 2006
83

Localization of the spherocytosis gene to chromosome segment 8p11.22→8p21.1

Year:
1988
Language:
english
File:
PDF, 195 KB
english, 1988
91

Self-consistent particle simulation of RF discharge in argon based on detailed collision data

Year:
1996
Language:
english
File:
PDF, 307 KB
english, 1996