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51

A three-terminal planar selfgating device for nanoelectronic applications

T. Müller, A. Lorke, Q.T. Do, F.J. Tegude, D. Schuh, W. Wegscheider

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 362 KB

english, 2005

52

InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources

P. Velling, M. Agethen, W. Prost, F.J. Tegude

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 291 KB

english, 2000

53

Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE

S. Neumann, A. Bakin, P. Velling, W. Prost, H.-H. Wehmann, A. Schlachetzki, F.-J. Tegude

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 153 KB

english, 2003

54

Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources

S. Neumann, W. Prost, F.-J. Tegude

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

55

MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications

S. Neumann, J. Spieler, R. Blache, P. Kiesel, W. Prost, G.H. Döhler, F.-J. Tegude

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 355 KB

english, 2003

56

The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

A. Lindner, P. Velling, W. Prost, A. Wiersch, E. Kuphal, A. Burchard, R. Magerle, M. Deicher, F.J. Tegude

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 365 KB

english, 1997

57

InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport

P. Velling, G. Janßen, M. Agethen, W. Prost, F.J. Tegude

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 183 KB

english, 1998

58

InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth

P. Velling, W. Fix, W. Geißelbrecht, W. Prost, G.H. Döhler, F.-J. Tegude

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 195 KB

english, 1998

59

Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures

U Hilburger, W Fix, R Mayer, W Geißelbrecht, S Malzer, P Velling, W Prost, F.J Tegude, G.H Döhler

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 337 KB

english, 1999

60

HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures

M Haase, W Prost, P Velling, Q Liu, F.J Tegude

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

61

Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques

H. Lakner, C. Mendorf, B. Bollig, W. Prost, F.-J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 575 KB

english, 1997

62

Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis

A. Brennemann, W. Prost, Q. Liu, U. Auer, F.J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 369 KB

english, 1997

63

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence

Q. Liu, W. Prost, F.J. Tegude

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 694 KB

english, 1997

64

Effects of (NH4)2S passivation on the performance of graded-base InGaAs/InP HBTs

Z. Jin, S. Neumann, W. Prost, F.-J. Tegude

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 96 KB

english, 2004

65

Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 µm based on the polarisation anisotropy of ordered InGaAsP

S. Krämer, S. Neumann, W. Prost, F. J. Tegude, S. Malzer, G. H. Döhler

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 159 KB

english, 2005

66

GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET

M. Porges, T. Lalinský, J. Šafranková, P. Hudek, J. Kraus, F. J. Tegude, W. von Wendorff, D. Jäger

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 369 KB

english, 1993

67

Photoelectrical properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET

J. Šafránková, M. Porges, T. Lalinsky, Z. Mozolová, P. Hudek, I. Kostič, J. Kraus, W. Von Wendorff, F. J. Tegude, D. Jäger

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 210 KB

english, 1993

68

Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors

B. Schlothmann, R. M. Bertenburg, M. Agethen, P. Velling, W. Brockerhoff, F.-J. Tegude

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 179 KB

english, 2003

69

Gold catalyst initiated growth of GaN nanowires by MOCVD

J.-P. Ahl, H. Behmenburg, C. Giesen, I. Regolin, W. Prost, F. J. Tegude, G. Z. Radnoczi, B. Pécz, H. Kalisch, R. H. Jansen, M. Heuken

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 800 KB

english, 2011

70

Alignment of Semiconductor Nanowires Using Ion Beams

Christian Borschel, Raphael Niepelt, Sebastian Geburt, Christoph Gutsche, Ingo Regolin, Werner Prost, Franz-Josef Tegude, Daniel Stichtenoth, Daniel Schwen, Carsten Ronning

Journal:

Year:

2009

Language:

english

File:

PDF, 481 KB

english, 2009

71

Nonlinear wave propagation along periodic-loaded transmission line

D. Jäger, F. -J. Tegude

Journal:

Applied Physics A: Materials Science & Processing

Year:

1978

Language:

english

File:

PDF, 379 KB

english, 1978

72

Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis

Q. Liu, W. Prost, A. Brennemann, U. Auer, F. J. Tegude

Journal:

Il Nuovo Cimento D

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

73

High performance III/V RTD and PIN diode on a silicon (001) substrate

W. Prost, V. Khorenko, A.-C. Mofor, S. Neumann, A. Poloczek, A. Matiss, A. Bakin, A. Schlachetzki, F.-J. Tegude

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 539 KB

english, 2007

74

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

Christoph Gutsche, Andrey Lysov, Ingo Regolin, Kai Blekker, Werner Prost, Franz-Josef Tegude

Journal:

Nanoscale Research Letters

Year:

2011

Language:

english

File:

PDF, 365 KB

english, 2011

75

Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

Andrey Lysov, Sasa Vinaji, Matthias Offer, Christoph Gutsche, Ingo Regolin, Wolfgang Mertin, Martin Geller, Werner Prost, Gerd Bacher, Franz-Josef Tegude

Journal:

Year:

2011

Language:

english

File:

PDF, 570 KB

english, 2011

76

MOVPE studies for a monolithically integrated DH laser/HBT laser driver

P. Speier, U. Koerner, A. Nowitzki, F. Grotjahn, F.J. Tegude, K. Wünstel

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 1022 KB

english, 1988

77

The Impact of Thyroid Disease on the Regulation, Expression, and Function of ABCB1 (MDR1/P Glycoprotein) and Consequences for the Disposition of Digoxin

Burk, O, Brenner, S S, Hofmann, U, Tegude, H, Igel, S, Schwab, M, Eichelbaum, M, Alscher, M D

Journal:

Clinical Pharmacology & Therapeutics

Year:

2010

Language:

english

File:

PDF, 256 KB

english, 2010

78

Predictive Value of Known and Novel Alleles of CYP2B6 for Efavirenz Plasma Concentrations in HIV-infected Individuals

Rotger, M, Tegude, H, Colombo, S, Cavassini, M, Furrer, H, Décosterd, L, Blievernicht, J, Saussele, T, Günthard, H F, Schwab, M

Journal:

Clinical Pharmacology & Therapeutics

Year:

2007

Language:

english

File:

PDF, 197 KB

english, 2007

79

Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

N. V. Alkeev, S. V. Averin, A. A. Dorofeev, P. Velling, E. Khorenko, W. Prost, F. J. Tegude

Journal:

Year:

2007

Language:

english

File:

PDF, 183 KB

english, 2007

80

Parallel Adder Design with Reduced Circuit Complexity Using Resonant Tunneling Transistors and Threshold Logic

Christian Pacha, Oliver Kessler, Peter Glo¨seko¨tter, Karl F. Goser, Werner Prost, Andreas Brennemann, Uwe Auer, Franz J. Tegude

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2000

Language:

english

File:

PDF, 342 KB

english, 2000

81

A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP

Stefan Krämer, S. Neumann, W. Prost, F.J. Tegude, S. Malzer, G.H. Döhler

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2006

Language:

english

File:

PDF, 269 KB

english, 2006

82

Variability in human hepatic MRP4 expression: influence of cholestasis and genotype

Gradhand, U, Lang, T, Schaeffeler, E, Glaeser, H, Tegude, H, Klein, K, Fritz, P, Jedlitschky, G, Kroemer, H K, Bachmakov, I

Journal:

The Pharmacogenomics Journal

Year:

2007

Language:

english

File:

PDF, 372 KB

english, 2007

83

Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP

M. Schilling, G. Schemmel, F. J. Tegude

Journal:

Journal of Electronic Materials

Year:

1986

Language:

english

File:

PDF, 967 KB

english, 1986

84

Scalable Electrical Properties of Axial GaAs Nanowirepn-Diodes

C. Gutsche, A. Lysov, I. Regolin, B. Münstermann, W. Prost, F. J. Tegude

Journal:

Journal of Electronic Materials

Year:

2012

Language:

english

File:

PDF, 384 KB

english, 2012

85

The 1/f noise of InP based 2DEG devices and its dependence on mobility

Berntgen, J., Heime, K., Daumann, W., Auer, U., Tegude, F.-J., Matulionis, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 372 KB

english, 1999

86

On-wafer microwave measurement setup for investigations on HEMTs and high-Tc superconductors at cryogenic temperatures down to 20 K

Meschede, H., Reuter, R., Albers, J., Kraus, J., Peters, D., Brockerhoff, W., Tegude, F.-J., Bode, M., Schubert, J., Zander, W.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1992

Language:

english

File:

PDF, 962 KB

english, 1992

87

VIA-6 planar monolithically integrated InGaAs p-i-n FET using the p-i-n-diode absorption layer as FET buffer layer

Tegude, F.J., Eisele, H., Schilling, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 314 KB

english, 1986

88

Surface recombination mechanism in graded-base InGaAs-InP HBTs

Jin, Z., Neumann, S., Prost, W., Tegude, F.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 111 KB

english, 2004

89

[IEEE 22nd European Microwave Conference, 1992 - Helsinki, Finland (1992.10.4-1992.10.6)] 22nd European Microwave Conference, 1992 - RF Investigations on HEMT's at Cryogenic Temperatures Down to 20 K using an On-Wafer Microwave Measurement Setup

Meschede, H., Albers, J., Reuter, R., Kraus, J., Peters, D., Brockerhoff, W., Tegude, F. J.

Year:

1992

Language:

english

File:

PDF, 392 KB

english, 1992

90

Room-temperature deposition of SiNx using ECR-PECVD for IIIV semiconductor microelectronics in lift-off technique

A. Wiersch, C. Heedt, S. Schneiders, R. Tilders, F. Buchali, W. Kuebart, W. Prost, F.J. Tegude

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 382 KB

english, 1995

91

Functional analysis of the polymorphism − 211C>T in the regulatory region of the human ABCC3 gene

Ulrike Gradhand, Heike Tegude, Oliver Burk, Michel Eichelbaum, Martin F. Fromm, Jörg König

Journal:

Year:

2007

Language:

english

File:

PDF, 276 KB

english, 2007

92

A novel 3-D integrated HFET/RTD frequency multiplier

Auer, U., Prost, W., Janssen, G., Agethen, M., Reuter, R., Tegude, F.J.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

1996

Language:

english

File:

PDF, 106 KB

english, 1996

93

Traps at interfaces between GaAs n-type LPE layers and different substrates

J. Baston, F.-J. Tegude, K. Heime

Journal:

Surface Science

Year:

1983

Language:

english

File:

PDF, 222 KB

english, 1983

94

Increased Absorption of Digoxin from the Human Jejunum Due to Inhibition of Intestinal Transporter-Mediated Efflux

Svitlana Igel, Siegfried Drescher, Thomas Mürdter, Ute Hofmann, Georg Heinkele, Heike Tegude, Hartmut Glaeser, Stefanie S. Brenner, Andrew A. Somogyi, Taher Omari, Christian Schäfer, Michel Eichelbaum

Journal:

Clinical Pharmacokinetics

Year:

2007

Language:

english

File:

PDF, 151 KB

english, 2007

95

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Monostable-Bistable Threshold Logic Elements in a fully complementary optical receiver circuit for high frequency applications

Matiss, Andreas, Poloczek, Artur, Brockerhoff, Wolfgang, Prost, Werner, Tegude, Franz-Josef

Year:

2008

Language:

english

File:

PDF, 508 KB

english, 2008

96

A precise optical determination of nanoscale diameters of semiconductor nanowires

Brönstrup, G, Leiterer, C, Jahr, N, Gutsche, C, Lysov, A, Regolin, I, Prost, W, Tegude, F J, Fritzsche, W, Christiansen, S

Journal:

Year:

2011

Language:

english

File:

PDF, 1.48 MB

english, 2011

97

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Fabrication and RF performance of InAs nanowire FET

Prost, W., Tegude, F. J.

Year:

2010

Language:

english

File:

PDF, 668 KB

english, 2010

98

[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - Junction field-effect transistor based on GaAs core-shell nanowires

Benner, O., Lysov, A., Gutsche, C., Keller, G., Schmidt, C., Prost, W., Tegude, F. J.

Year:

2013

Language:

english

File:

PDF, 612 KB

english, 2013

99

[IEEE International Conference on Microelectronics - Nis, Serbia (12-14 Sept. 1995)] Proceedings of International Conference on Microelectronics - Relaxation mechanisms in 2D electron gas and origin of 1/f noise in HEMT's

Mihaila, M., Heedt, C., Tegude, F.G.

Year:

1995

Language:

english

File:

PDF, 618 KB

english, 1995

100

Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangement

Liu, Q., Prost, W., Tegude, F. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 298 KB

english, 1995

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