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Threshold and probability of impact ionization by electrons in narrow-gapp-type semiconductors with highly degenerate holes
A. V. Dmitriev, A. B. EvlyukhinVolume:
39
Language:
english
Pages:
5
DOI:
10.1134/1.1130127
Date:
February, 1997
File:
PDF, 118 KB
english, 1997