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Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, E. I. CherepovVolume:
31
Language:
english
Pages:
4
DOI:
10.1134/1.1187127
Date:
March, 1997
File:
PDF, 59 KB
english, 1997