Modeling of mass transfer under conditions of local...

Semiconductors 1997 / 04 Vol. 31; Iss. 4

Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask

L. B. Proékt, M. A. Kaliteevskii, V. B. Kantor, D. A. Piotrovskii, M. A. Sinitsyn, B. S. Yavich
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Volume:
31
Language:
english
Pages:
4
DOI:
10.1134/1.1187171
Date:
April, 1997
File:
PDF, 108 KB
english, 1997
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