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InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. H. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, Yu. P. YakovlevVolume:
31
Language:
english
Pages:
4
DOI:
10.1134/1.1187264
Date:
August, 1997
File:
PDF, 72 KB
english, 1997