Structure and properties of porous silicon obtained by...

Semiconductors 1997 / 10 Vol. 31; Iss. 10

Structure and properties of porous silicon obtained by photoanodization

E. V. Astrova, V. V. Ratnikov, R. F. Vitman, A. A. Lebedev, A. D. Remenyuk, Yu. V. Rud’
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Volume:
31
Language:
english
Pages:
7
DOI:
10.1134/1.1187320
Date:
October, 1997
File:
PDF, 132 KB
english, 1997
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