Radiation defect formation in Ge-doped silicon as a result...

Semiconductors 1998 / 02 Vol. 32; Iss. 2

Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation

L. I. Khirunenko, V. I. Shakhovtsov, V. V. Shumov
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Volume:
32
Language:
english
Pages:
3
DOI:
10.1134/1.1187329
Date:
February, 1998
File:
PDF, 72 KB
english, 1998
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