Optical characteristics of 1.18-eV luminescence band complexes inn-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation
A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, J. PultorakVolume:
32
Language:
english
Pages:
7
DOI:
10.1134/1.1187356
Date:
January, 1998
File:
PDF, 152 KB
english, 1998