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Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions
V. I. Obodnikov, E. G. TishkovskiiVolume:
32
Language:
english
Pages:
3
DOI:
10.1134/1.1187398
Date:
April, 1998
File:
PDF, 69 KB
english, 1998