Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed illumination of the samples
P. G. Kasherininov, D. G. MatyukhinVolume:
32
Language:
english
Pages:
4
DOI:
10.1134/1.1187446
Date:
June, 1998
File:
PDF, 86 KB
english, 1998