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Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, N. G. YaremenkoVolume:
32
Language:
english
Pages:
3
DOI:
10.1134/1.1187521
Date:
September, 1998
File:
PDF, 70 KB
english, 1998