Arsenic cluster superlattice in gallium arsenide grown by...

Semiconductors 1998 / 10 Vol. 32; Iss. 10

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret’yakov, P. Werner
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Volume:
32
Language:
english
Pages:
4
DOI:
10.1134/1.1187561
Date:
October, 1998
File:
PDF, 738 KB
english, 1998
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