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Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers
V. G. Mokerov, G. B. Galiev, Yu. V. Slepnev, Yu. V. KhabarovVolume:
32
Language:
english
Pages:
4
DOI:
10.1134/1.1187586
Date:
November, 1998
File:
PDF, 113 KB
english, 1998