Investigation of MOVPE-grown GaN layers doped with As atoms

Semiconductors 1999 / 07 Vol. 33; Iss. 7

Investigation of MOVPE-grown GaN layers doped with As atoms

A. F. Tsatsul’nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alfërov, A. Hoffmann
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Volume:
33
Language:
english
Pages:
3
DOI:
10.1134/1.1187770
Date:
July, 1999
File:
PDF, 46 KB
english, 1999
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