Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, V. V. ChaldyshevVolume:
33
Language:
english
Pages:
6
DOI:
10.1134/1.1187790
Date:
August, 1999
File:
PDF, 540 KB
english, 1999