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Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, V. M. UstinovVolume:
33
Language:
english
Pages:
5
DOI:
10.1134/1.1187863
Date:
October, 1999
File:
PDF, 553 KB
english, 1999