Variation of the parameters and composition of thin films...

Semiconductors 1999 / 10 Vol. 33; Iss. 10

Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: Ellipsometric studies

E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, V. A. Tolmachev
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Volume:
33
Language:
english
Pages:
7
DOI:
10.1134/1.1187885
Date:
October, 1999
File:
PDF, 102 KB
english, 1999
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