Activation-controlled conduction and metal-insulator...

Semiconductors 2000 / 04 Vol. 34; Iss. 4

Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gapp-Hg1−xCdxTe doped crystals

V. V. Bogoboyashchii, S. G. Gasan-zade, G. A. Shepel’skii
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Volume:
34
Language:
english
Pages:
7
DOI:
10.1134/1.1187995
Date:
April, 2000
File:
PDF, 103 KB
english, 2000
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