Redistribution of phosphorus implanted into silicon doped heavily with boron
E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, V. G. SeryapinVolume:
34
Language:
english
Pages:
5
DOI:
10.1134/1.1188043
Date:
June, 2000
File:
PDF, 64 KB
english, 2000