The magnetoresistance of compensated Ge:As at microwave...

Semiconductors 2000 / 07 Vol. 34; Iss. 7

The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek
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Volume:
34
Language:
english
Pages:
9
DOI:
10.1134/1.1188066
Date:
July, 2000
File:
PDF, 138 KB
english, 2000
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