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Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)Borientations
G. B. Galiev, V. G. Mokerov, Yu. V. Slepnev, Yu. V. Khabarov, A. A. Lomov, R. M. ImamovVolume:
44
Language:
english
Pages:
3
DOI:
10.1134/1.1259351
Date:
July, 1999
File:
PDF, 80 KB
english, 1999