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Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous lowenergy ion bombardment of the growth surface
Sh. G. Shengurov, V. N. Shabanov, A. V. ShabanovVolume:
23
Language:
english
Pages:
3
DOI:
10.1134/1.1261843
Date:
April, 1997
File:
PDF, 63 KB
english, 1997