Films ofa-Si:H doped with erbium from the metalorganic...

Technical Physics Letters 1998 / 07 Vol. 24; Iss. 7

Films ofa-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54μm

V. B. Voronkov, V. G. Golubev, N. I. Gorshkov, A. V. Medvedev, A. B. Pevtsov, D. N. Suglobov, N. A. Feoktistov
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Volume:
24
Language:
english
Pages:
2
DOI:
10.1134/1.1262169
Date:
July, 1998
File:
PDF, 64 KB
english, 1998
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