Separately bounded InGaAsP high-power laser...

Technical Physics Letters 2000 / 03 Vol. 26; Iss. 3

Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds

E. G. Golikova, V. A. Gorbylev, N. Yu. Davidyuk, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, V. A. Simakov, I. S. Tarasov, N. V. Fetisova
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Volume:
26
Language:
english
Pages:
3
DOI:
10.1134/1.1262799
Date:
March, 2000
File:
PDF, 43 KB
english, 2000
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