Manganese depth-concentration profiles in ion-implanted...

Technical Physics Letters 2001 / 02 Vol. 27; Iss. 2

Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

B. É. Égamberdiev, M. Yu. Adylov
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Volume:
27
Language:
english
Pages:
3
DOI:
10.1134/1.1352783
Date:
February, 2001
File:
PDF, 47 KB
english, 2001
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