Study of the structural perfection and...

Technical Physics 2001 / 04 Vol. 46; Iss. 4

Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

G. B. Galiev, V. G. Mokerov, V. V. Saraikin, Yu. V. Slepnev, G. I. Shagimuratov, R. M. Imamov, É. M. Pashaev
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Volume:
46
Language:
english
Pages:
6
DOI:
10.1134/1.1365463
Date:
April, 2001
File:
PDF, 232 KB
english, 2001
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