Light emitting diodes for the spectral range λ=3.3–4.3 µm...

Semiconductors 2001 / 05 Vol. 35; Iss. 5

Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin
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Volume:
35
Language:
english
Pages:
7
DOI:
10.1134/1.1371629
Date:
May, 2001
File:
PDF, 107 KB
english, 2001
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