Origin of an absorption band peaked at 5560 cm−1and related...

Semiconductors 2001 / 08 Vol. 35; Iss. 8

Origin of an absorption band peaked at 5560 cm−1and related to divacancies in Si1−xGex

Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, W. Schröder
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Volume:
35
Language:
english
Pages:
5
DOI:
10.1134/1.1393022
Date:
August, 2001
File:
PDF, 71 KB
english, 2001
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