On the properties of a radiation-induced defect responsible...

Technical Physics Letters 2001 / 12 Vol. 27; Iss. 12

On the properties of a radiation-induced defect responsible for the 1.0-eV IR absorption band in gallium arsenide

Z. V. Dzhibuti, N. D. Dolidze
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Volume:
27
Language:
english
Pages:
2
DOI:
10.1134/1.1432330
Date:
December, 2001
File:
PDF, 28 KB
english, 2001
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