Initial stages of the GaN growth on oxidized silicon

Technical Physics Letters 2001 / 12 Vol. 27; Iss. 12

Initial stages of the GaN growth on oxidized silicon

V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, S. A. Kukushkin, A. V. Luk’yanov, S. D. Raevskii, V. A. Fedirko
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Volume:
27
Language:
english
Pages:
3
DOI:
10.1134/1.1432331
Date:
December, 2001
File:
PDF, 130 KB
english, 2001
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