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Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy
N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman, A. S. Tregubova, A. A. VolkovaVolume:
36
Language:
english
Pages:
5
DOI:
10.1134/1.1493745
Date:
July, 2002
File:
PDF, 158 KB
english, 2002