Low-threshold defect formation and modification of Ge...

Semiconductors 2002 / 08 Vol. 36; Iss. 8

Low-threshold defect formation and modification of Ge surface layer under elastic and elastoplastic pulsed laser effects

S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, A. V. Chervyakov
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Volume:
36
Language:
english
Pages:
6
DOI:
10.1134/1.1500465
Date:
August, 2002
File:
PDF, 79 KB
english, 2002
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