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Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantation
V. A. Kozlov, V. V. Kozlovskii, A. N. Titkov, M. S. Dunaevskii, A. K. KryzhanovskiiVolume:
36
Language:
english
Pages:
8
DOI:
10.1134/1.1521221
Date:
November, 2002
File:
PDF, 502 KB
english, 2002