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Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers
L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. ChaldyshevVolume:
47
Language:
english
Pages:
1
DOI:
10.1134/1.1529966
Date:
January, 2002
File:
PDF, 257 KB
english, 2002