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The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures
V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky, S. V. Romanenko, L. S. ShirokovaVolume:
29
Language:
english
Pages:
4
DOI:
10.1134/1.1544334
Date:
January, 2003
File:
PDF, 48 KB
english, 2003