Peculiarities of the long-range effects in GaAs-Based...

Technical Physics Letters 2003 / 01 Vol. 29; Iss. 1

Peculiarities of the long-range effects in GaAs-Based transistor structures upon combined irradiation with ions of various masses

S. V. Obolensky, V. D. Skupov
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Volume:
29
Language:
english
Pages:
3
DOI:
10.1134/1.1544347
Date:
January, 2003
File:
PDF, 46 KB
english, 2003
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