Semi-insulating silicon carbide layers obtained by...

Semiconductors 2003 / 05 Vol. 37; Iss. 5

Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC

M. G. Mynbaeva, A. A. Lavrent’ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, A. A. Lebedev
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Volume:
37
Language:
english
Pages:
4
DOI:
10.1134/1.1575367
Date:
May, 2003
File:
PDF, 49 KB
english, 2003
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