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Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel
V. A. Gergel’, Yu. V. Gulyaev, A. P. Zelenyi, M. N. YakupovVolume:
48
Language:
english
Pages:
3
DOI:
10.1134/1.1591309
Date:
June, 2003
File:
PDF, 39 KB
english, 2003