Effect of growth conditions on incorporation of Si into Ga...

Semiconductors 2003 / 09 Vol. 37; Iss. 9

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, S. E. Toropov
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Volume:
37
Language:
english
Pages:
6
DOI:
10.1134/1.1610116
Date:
September, 2003
File:
PDF, 80 KB
english, 2003
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