Effective cross section for photoluminescence excitation...

Semiconductors 2003 / 09 Vol. 37; Iss. 9

Effective cross section for photoluminescence excitation and lifetime of excited Er3+ions in selectively doped multilayer Si:Er structures

S. V. Gastev, A. M. Emel’yanov, N. A. Sobolev, B. A. Andreev, Z. F. Krasil’nik, V. B. Shmagin
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Volume:
37
Language:
english
Pages:
4
DOI:
10.1134/1.1610127
Date:
September, 2003
File:
PDF, 49 KB
english, 2003
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