1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP...

Semiconductors 2003 / 11 Vol. 37; Iss. 11

1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures

A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan, I. S. Tarasov
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Volume:
37
Language:
english
Pages:
7
DOI:
10.1134/1.1626224
Date:
November, 2003
File:
PDF, 99 KB
english, 2003
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